Mitsubishi Electric, with the theme of "Innovative Power Devices for a Sustainable Future," brought six new products to a perfect conclusion at the PCIM Asia Exhibition 2014 held at the Shanghai World Expo Exhibition Center from June 17-19 this year.

The product range exhibited by Mitsubishi Electric this time spans six major fields, including industrial applications, variable frequency home appliance applications, renewable energy applications, railway traction and power applications, electric vehicle applications, and silicon carbide device applications.

In terms of new products, the all-new 7th generation IGBT module exhibited this time has received widespread attention from the audience. It is suitable for industrial drive and solar power generation, and uses 7th generation IGBT silicon wafers and diode silicon wafers; It has three voltage levels: 650V, 1200V, and 1700V; Improve the controllability of utilizing gate resistance to optimize dv/dt; Covering module current from 75A to 2500A; Inheriting the traditional three types of packaging and adapting to different structural design requirements; The use of pre coated thermal interface materials reduces the contact thermal resistance between the module and the heat sink.

In terms of high-end frequency converters and servo drive applications, the G series IPM (Intelligent Power Module) launched at this exhibition uses the 7th generation CSTBTTM silicon wafer, which can further reduce losses; And it adopts a narrow and elongated package that is more suitable for servo drive applications; Its compatible control pins are the same as the existing L1 series.

For railway traction and DC transmission applications, the newly launched X series HVIGBT was showcased. It adopts the latest generation HVIGBT, which can further improve the current level of 3.3kV/4.5kV/6.5kV; By applying the 7th generation IGBT and RFC Diode silicon wafer technology, lower saturation voltage drop and switching losses can be achieved; It adopts 6500V/1000A single tube HVIGBT for power transmission applications.

In the application of electric vehicles, the latest J1 series EV T-PM module is exhibited, which is a six in one IGBT module for automobiles with a Pin fin base plate. And the low loss 7th generation IGBT silicon wafer technology was applied. Compared with traditional structures, it can reduce thermal resistance by 40% and installation area by 40%. Very suitable for compact electric vehicles.

In addition, for solar power generation, IGBT modules for three-level inverters were also exhibited at this exhibition. Its characteristics are low loss, low inductance, high insulation, and easy parallel connection, which can fully meet the needs of the developing solar power generation market.

In terms of silicon carbide device applications, four products were showcased this year, including hybrid silicon carbide DIPIPMTM for variable frequency air conditioning, hybrid silicon carbide IPM for servo drives, all silicon carbide MOSFET modules for new energy generation, and hybrid silicon carbide HVIGBT for railway traction.

Compared with traditional silicon power devices, silicon carbide power devices have the characteristics of extremely small turn off tail current, fast switching speed, low loss, and high temperature resistance. Developing power electronic converters using silicon carbide power devices can improve power density and reduce device size; Improve the efficiency of the inverter; Increase the switching frequency and reduce the size of the filter; Ensure the reliability of operation in high-temperature environments; It is also easy to achieve high voltage and high power design. Silicon carbide power devices can be widely used in energy-saving, high-frequency, and high-temperature power electronic systems.

In order to facilitate customers in developing inverter products using new power modules, Mitsubishi Electric has showcased various integrated application solutions, including MPDStacK for wind power based on the new MPD; 500kW photovoltaic inverter power module based on new MPD; A servo drive solution based on small DIPIPMTM for industrial use; A universal frequency converter solution based on the 6th generation DIPIPMTM; Drive solution for variable frequency air conditioning compressor based on 6th generation DIPIPMTM; Drive solution for variable frequency refrigerator compressor based on MOS DIPIPMTM; And J1 series EV T-PM test kit.

As the world's first company to master power semiconductor silicon wafer technology and packaging technology, Mitsubishi Electric will continue to actively devote itself to the development and application of new materials, striving to contribute high-performance and high reliability power semiconductor modules to the power electronics industry!