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Mitsubishi Electric begins to provide samples of "high-frequency hybrid SiC power semiconductor modules"

Column：Industry News Time：2014-06-17

Helps to achieve high efficiency, miniaturization, and lightweight of power electronic devices

High frequency hybrid SiC power semiconductor module begins to provide samples

Mitsubishi Electric Corporation will begin providing high-frequency mixed SiC power semiconductor samples on May 15th, with the diode part of the power semiconductor made of SiC ※ 1 material. By adopting silicon carbide (SiC) technology, it will be more helpful for power electronic devices such as uninterruptible power supplies (UPS), medical device dedicated power supplies, solar inverters, etc. to achieve high efficiency, miniaturization, and lightweight.

In addition, high-frequency hybrid SiC power semiconductor modules will be exhibited at the PCIM ※ 2 Europe 2014 exhibition (held in Nuremberg, Germany from May 20-22).

※ 1 SiliconCarbon: Silicon carbide

※2 PCIM：Power Conversion Intelligent Motion

CMH100DY-24NFH CMH 200DU-24NFH CMH 400DU-24NFH

CMH150DY-24NFH CMH300DU-24NFH CMH 600DU-24NFH

High frequency hybrid SiC power semiconductor module

Characteristics of the new product

1. Reduce losses by about 40%, which helps to achieve high efficiency, miniaturization, and lightweight of the device

Adopting a hybrid structure of SiC SBD ※ 3 for diodes and Si IGBT for transistors in high-frequency switches.

SiC SBD, as it does not generate reverse recovery current, can significantly reduce switch losses by about 40%, thus helping to achieve high efficiency of the device.

Due to the significant reduction in losses, it will be beneficial for further miniaturization and lightweighting of heat dissipation devices, while high-frequency power devices will help achieve miniaturization and lightweighting of components such as reactors.

※ 3 Schottky Barrier Diode: Schottky Barrier Diode

2. The internal parasitic inductance is reduced, which can effectively suppress surge voltage

Adopting low inductance packaging suitable for high-speed switches.

Compared to previous products ※ 4, 100A and 150A products have reduced internal parasitic inductance by approximately 30%.

※ 4 High frequency IGBT module "NFH series" using silicon (Si)

3. Consistent with previous product packaging, convenient for users to replace

Ensuring packaging consistency with previous product ※ 4, it can be directly replaced.

Overview of the new product

Product Name	Model	Summary	Sample production date
High frequency use Mixed SiC Power Semiconductor modular	CMH100DY-24NFH	1200V/100A2in1	5月15日
	CMH150DY-24NFH	1200V/150A2in1
	CMH200DU-24NFH	1200V/200A2in1
	CMH300DU-24NFH	1200V/300A2in1
	CMH400DU-24NFH	1200V/400A2in1
	CMH600DU-24NFH	1200V/600A2in1

Purpose of providing samples

In recent years, from the perspective of efficient energy utilization, the use of power semiconductors made of silicon carbide (SiC) can significantly reduce power losses and achieve high-speed switching of power devices. Therefore, users' expectations for it are becoming increasingly urgent. Previously, for power electronic devices such as uninterruptible power supply (UPS) and medical device dedicated power supplies that require high-frequency switching operations, our company has provided the "NFH series" of power semiconductor modules with optimized switching characteristics.

Now, through further research and development, Mitsubishi Electric has begun to provide samples of hybrid silicon carbide (SiC) modules for high-frequency use. As a new lineup of the "NFH series", this module can significantly reduce power loss by using SiC SBD.

High frequency hybrid SiC power semiconductor modules are developed as part of the New Energy and Industrial Technology Development Organization (NEDO) technology.

Main specifications

Purpose	Model	Rated voltage	Rated current	Circuit	Package size （W）×（D）
Industrial equipment	CMH100DY-24NFH	1200V	100A	2in1	48×94mm
	CMH150DY-24NFH		150A		48×94mm
	CMH200DU-24NFH		200A		62×108mm
	CMH300DU-24NFH		300A		62×108mm
	CMH400DU-24NFH		400A		80×110mm
	CMH600DU-24NFH		600A		80×110mm

Environmental considerations

This product complies with the RoHS * 6 standard set by EU member states and does not contain mercury.

※5 RestrictionoftheuseofcertainHazardousSubstancesinelectricalandelectronicequipment

Manufacturing factory

Mitsubishi Electric Corporation Power Device Manufacturing Institute

1-1 Imasu Higashi 1-chome, Nishi ku, Fukuoka City, Fukuoka Prefecture 819-0192

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